Electron Devices and Circuits: Unit II: (a) Bipolar Junction Transistors (BJT) : Syllabus, Contents
UNIT – II
Chapter – 2
(a) Bipolar Junction Transistors (BJT)
Syllabus
BJT
- Structure, Operation, Characteristics and biasing.
Contents
2.1
Introduction ….. 2-2 May-12, ….. Marks 3
2.2
Structure of pnp and npn Transistors 2-2
2.3
Principle of Operation of Transistors 2-3
…. May-09, 12, 13, Dec.-l0, 14, Marks 4
2.4
CB, CE and CC Transistor Configurations 2-9
…. Feb.-02,09, Dec.-02,03,04,05,06,07,08,09,10,13,17, … Marks 16
2.5
Biasing of BJT ….. 2-19 …. Dec.-14, 15, Marks 2
2.6
Biasing Stability …. 2-24
2.7
Stability Factor ….. 2-24 …… Dec.-18, Marks 13
2.8
Different Biasing Circuits 2-26
Dec.-02,
04, 05, 06, 08, 10, 11, 13, 15, 17, 18, May-04, 05, 06, 11, 12, 17, Marks 15
2.9
Bias Compensation Techniques 2-37 …. May-03,
10, 13, Dec.-04, 09, 10, 12, Marks 8
2.10 Biasing Transistors for Switching Circuits. .
. 2 - 39
2.11 Two Marks Questions with Answers 2-40
2.12 University Questions with Answers
(Long
Answered Questions) 2-43
Electron Devices and Circuits: Unit II: (a) Bipolar Junction Transistors (BJT) : Tag: : Electron Devices and Circuits - Bipolar Junction Transistors (BJT)
Electron Devices and Circuits
EC3301 3rd Semester EEE Dept | 2021 Regulation | 3rd Semester EEE Dept 2021 Regulation