Electron Devices and Circuits: Unit II: (a) BJT Amplifiers : Syllabus, Contents
UNIT – III
Chapter - 6
(a) BJT Amplifiers
Syllabus
BJT
small signal model -Analysis of CE, CB, CC amplifiers - Gain and frequency
response.
Contents
6.1
CE, CB and CC Amplifiers … 6-2 Dec.-15,
17, 18, Marks 5
6.2
Two Port Devices and the Hybrid Model 6-3
6.3
Transistor Hybrid Model 6-4 Dec.-13,
May-15, Marks 8
6.4
Small Signal Amplifier Performance interms of h-parameters 6-8 May-03, 05, 09, 15, 16, Dec.-05, 06, 14,
16, Marks 16
6.5
Method for Analysis of a Transistor Circuit. . 6 -16
6.6
Analysis of Transistor Amplifier Configurations using Simplified h-parameter
Model 6-16 … Dec.-16, Marks 15
6.7
Analysis of CE Amplifier with Collector to Base Bias …. 6-22
6.8
Analysis of CE Amplifier with an Emitter Resistance ….. 6-25
6.9
Frequency Response of an Amplifier
…. 6-27 May-04,07,08,09,11, Dec.-02,05,06,08,09,ll,14, Marks 16
6.10
Analysis of CE, CB and CC Amplifier using re Model …. 6-33Dec.-18, Marks 13
6.11
Two Marks Questions with Answers 6-46
6.12
University Questions with Answers
(Long
Answered Questions) 6-47
Electron Devices and Circuits: Unit III: (a) BJT Amplifiers : Tag: : Electron Devices and Circuits - BJT Amplifiers
Electron Devices and Circuits
EC3301 3rd Semester EEE Dept | 2021 Regulation | 3rd Semester EEE Dept 2021 Regulation