• It is seen that in conductors current flow is due to the free electrons. When conductor is subjected to an external voltage, free electrons move from negative to positive terminal with a steady velocity constituting a current.
Diffusion Current
•
It is seen that in conductors current flow is due to the free electrons. When
conductor is subjected to an external voltage, free electrons move from
negative to positive terminal with a steady velocity constituting a current.
Such a current is called drift current which is due to drifting of free electrons
under the externally applied voltage.
•
In addition to the drift current, there may exist an additional current due to
the transport of charges in a semiconductor. Such an additional current is due
to the phenomenon called diffusion. This is the characteristic of
semiconductors and cannot be observed in conductors. The current due to the
diffusion is called diffusion current. Basically it is due to nonuniform
concentration of charged particles in a semiconductor.
Key
Point : Diffusion is observed in nonuniformly doped
semiconductors and not in the conductors.
•
Consider a p-type semiconductor bar which is nonuniformly doped as shown in the
Fig. 1.3.1. Due to nonuniform doping, the holes are large in number on one side
while less in number on other side. Due to this there is high carrier
concentration area on one side while low carrier concentration area on other
side. This creates concentration gradient in a semiconductor.

•
In p-type, there are large number of holes on one side which are similarly
(positively) charged particles. Due to this there exists a force of repulsion
between them and holes start moving from higher concentration to lower
concentration area, to attain the uniform concentration.
•
Such a movement of charge carriers, due to the concentration gradient in a
semiconductor is called process of diffusion. When charge carriers move, the
current is constituted in a bar. This current due to the diffusion is called
diffusion current.
Key
Point : Nonuniform doping creates concentration
gradient, due to which diffusion of charge carriers exists.
•
The concept of diffusion current is shown in the Fig. 1.3.2.

•
There can exist such a diffusion in a n-type semiconductor if there is
nonuniform doping and hence concentration gradient existing in it. In n-type,
due to diffusion, free electrons move to constitute diffusion current.
Key
Point: Such a diffusion plays an important role in
understanding the theory of p-n junction.
•
Both drift current as well as diffusion current occur in the semiconductor
devices like p-n junction diode.
Review Question
1. What is diffusion current ?
Electron Devices and Circuits: Unit I: PN Junction Devices : Tag: : PN Junction Devices - Diffusion Current
Electron Devices and Circuits
EC3301 3rd Semester EEE Dept | 2021 Regulation | 3rd Semester EEE Dept 2021 Regulation