Electron Devices and Circuits: Unit II: (c) MOSFET
MOSFET
Electron Devices and Circuits
Electron Devices and Circuits: Unit II: (c) MOSFET : Syllabus, Contents
UNIT – II
Chapter – 4
(c) MOSFET
Syllabus
MOSFET
– Structure, Operation, Characteristics and biasing
Contents
4.1
Introduction …. 4-2 May – 13, Marks 2
4.2
Depletion MOSFET (D-MOSFET) … 4-2 Dec.-17, 18, Marks 13
4.3
Enhancement MOSFET (E-MOSFET) … 4-5 May-13, 14, 15, 16, 17, Dec.-13, 15, Harks
16
4.4
Nonideal Current Voltage Characteristics .... 4 - 9
4.5
Biasing of MOSFET … 4-13
4.6
Comparison between MOSFETs … 4-23
May-14
4.7
Comparison between BJT and MOSFET 4-25
…. May-14
4.8
Two Marks Questions with Answers ……. 4-26
4.9
University Questions with Answers
(Long
Answered Questions) …… 4-26
Electron Devices and Circuits: Unit II: (c) MOSFET : Tag: : Electron Devices and Circuits - MOSFET
Related Topics
Related Subjects
Electron Devices and Circuits
EC3301 3rd Semester EEE Dept | 2021 Regulation | 3rd Semester EEE Dept 2021 Regulation