Electron Devices and Circuits
Subject and UNIT: Electron Devices and Circuits: Unit III: (b) MOSFET Amplifier
Electron Devices and Circuits: Unit III: (b) MOSFET Amplifier : Syllabus, Contents
BJT Amplifiers | Electron Devices and Circuits
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
Electron Devices and Circuits: Unit III: (a) BJT Amplifiers : University Questions with Answers (Long Answered Questions)
BJT Amplifiers | Electron Devices and Circuits
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
Electron Devices and Circuits: Unit III: (a) BJT Amplifiers : Two Marks Questions with Answers
BJT Amplifiers | Solved Example Problems
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
• The r-parameters (resistance -parameters) are perhaps easier to work with than h-parameters. Let us see the r-parameter model for transistor.
Solved Example Problems
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
• The frequency response is nearly ideal over a wide range of mid-frequency. Only at low and high frequency ends, the gain deviates from ideal characteristics. The decrease in voltage gain with frequency is called roll-off.
Solved Example Problems | BJT Amplifiers
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
• The simple and effective way to obtain voltage gain stabilization is to add an emitter resistance RE to a CE stage as shown in Fig. 6.8.1.
Miller’s Theorem, Solved Example Problems | BJT Amplifiers
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
• For the analysis of this circuit it is necessary to split this resistance for input and output. This can be achived by using Miller’s theorem.
Solved Example Problems | BJT Amplifiers
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
• In most practical cases it is appropriate to obtain approximate values of current gain, voltage gain, input and output impedances rather than to carry out more lengthy exact calculations.
BJT Amplifiers
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
• In the previous section, we have seen generalized transistor circuit analysis using h-parameters. There are many transistor circuits. Circuits may consist of different biasing techniques, different configurations and so on. The analysis of such transistor circuits for its small signal behaviour can be made by following simple guidelines. These guidelines are :
Solved Example Problems | BJT Amplifiers
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
• The Fig. 6.4.1 shows basic amplifier circuit. It represents a transistor in any one of the three possible configurations.
4 h-parameters and its benefits | BJT Amplifiers
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
• In order to analyze transistorized amplifier circuit and calculate its input impedance, output impedance, current gain and voltage gain, it is necessary to replace transistor circuit with its h-parameter equivalent.
BJT Amplifiers
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
• The terminal behaviour of a large class of two-port devices is specified by two voltages and two currents.