BJT Amplifiers
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
1. Common Emitter Amplifier Circuit 2. Common Collector Amplifier Circuit 3. Common Base Amplifier Circuit 4. Phase Relation between Input and Output
Electron Devices and Circuits
Subject and UNIT: Electron Devices and Circuits: Unit III: (a) BJT Amplifiers
Electron Devices and Circuits: Unit II: (a) BJT Amplifiers : Syllabus, Contents
UJT Thyristor and IGBT | Electron Devices and Circuits
Subject and UNIT: Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT
Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT : University Questions with Answers (Long Answered Questions)
UJT Thyristor and IGBT | Electron Devices and Circuits
Subject and UNIT: Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT
Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT : Two Marks Questions with Answers
Construction, Principle of Operation, Symbols, Characteristics, Merits, Demerits, Applications
Subject and UNIT: Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT
• The Insulated Gate Bipolar Transistor (IGBT) is the latest device in power electronics. It is obtained by combining the properties of BJT and MOSFET. We know that BJT has lower on-state losses for high values of collector current.
Construction, Principle of Operation, Symbols, Characteristics, Merits, Demerits
Subject and UNIT: Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT
• The triac is another important member of the thyristor family. It is basically two parallel SCRs turned in opposite directions, with a common gate terminal.
Construction, Principle of Operation, Symbols, Equivalent Circuit, Characteristics, Applications
Subject and UNIT: Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT
• The diac is a two terminal, four layer device. It conducts in either directions hence it is also called bilateral trigger diode.
Construction, Principle of Operation, Symbols, Equivalent Circuit, Characteristics, Parameters, Merits, Demerits, Applications
Subject and UNIT: Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT
• The SCR is a four layer p-n-p-n device where p and n layers are alternately arranged. The outer layers are heavily doped while inner layers are lightly doped.
Subject and UNIT: Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT
• In various modem electronic applications such as variable speed drives, temperature control, light and illumination control, motor current control etc., some special type of control devices are used. Such devices are called power switching and control devices.
Construction, Principle of Operation, Symbols, Equivalent Circuit, Characteristics, Applications, Solved Example Problems
Subject and UNIT: Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT
• A unijunction transistor (UJT) is a device which does not belong to thyristor family but is used to turn ON SCRs.
Electron Devices and Circuits
Subject and UNIT: Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT
Electron Devices and Circuits: Unit II: (d) UJT Thyristor and IGBT : Syllabus, Contents
MOSFET | Electron Devices and Circuits
Subject and UNIT: Electron Devices and Circuits: Unit II: (c) MOSFET
Electron Devices and Circuits: Unit II: (c) MOSFET : University Questions with Answers (Long Answered Questions)