The optoelectronic switching devices are very useful for computing and light activated logic gates applications.
OPTICAL (PHOTONIC) SWITCHING
The
optoelectronic switching devices are very useful for computing and light
activated logic gates applications.
Optical
or photonic switching refers to phenomenon in which transmission of an optical
field through a device is switched among two or more possible states by optical
means.
There
are two types of optical switching such as linear optical switching and non
linear optical switching. The Quantum Controlled Stark Effect (QCSE) in p-i
(Multi Quantum Well) -n (p type instrinsic - n - type) diode is used for linear
optical switching. optically controlled switching and logic devices are based
on the QCSE.
Quantum
confined stark effect refers to the bending of potential well due to transverse
applied electric field and shifting of the absorption edge of exciton to lower
energy side and resulting absorption of photons whose energy is less than the
original exciton absorption peak energy.
The
quantum wells can be reduced in their size as quantum wires and quantum dots.
Quantum dots are the nanometre size box like structure. When the electrons are
confined in 10 nm scale 3-D semiconductor heterostructures, the electron motion
is fully quantized which creates artificial atomic states in semiconductors.
enge
The quantum dots provide the quantum computers which are faster and provide
more memory than conventional computers. Each quantum dot consists of about 20
electrons and acts as an optical switch. Here GaAs is the basic material. The
spin direction of electron is mainly taken into account for on off condition.
The
nonlinear optical switching is based on the self phase modulation (SPM).
The
transmission of light through the device is intensity dependent so that the
optical beam itself induces a switching depending on its intensity. This
phenomenon is called self phase modulation and it exhibits in optical fiber.
In
a short piece of optical fiber, its ends are made highly reflecting through
suitable thin film coating. This device is used to select a particular channel
in a multichannel optical communication system.
The
phase shift introduced by the above fiber depends on intensity and power of the
light beam. The nonlinear optical switching provides a faster switching time 10
second.
Self
Electro Optic Effect Device (SEED)
In
p-i (MQW) -n diode, when the reverse bias voltage increases to a large value,
the tunneling current varies remarkably as shown in fig.4.36.
The
photocurrent-bias voltage characteristic curve, exihibits negative differential
resistance (NDR) region (Fig.4.36). The NDR occurs where the heavy-hole (HH)
and the light-hole (LH) absorption peaks cross the photon energy of the input
light.
This
NDR effect is exploited in SEED. Thus the SEED device exhibits photonic
switching, bistability and optically induced oscillations.
Slope
at NDR range is negative i.e., photo current decreases with increase of bias
voltage. I aid
Fig.
4.37(a) shows the p-i (MQW) -n diode in the reverse bias with a series resistor
'RS
Fig.
4.37(b), shows input and output power response of the switching device, Pin
is incident optical power and Pout = I2 RS is
electric output power. Here I is the photo current flowing through resistance Rs
Working:
•
At low bias voltages and low optical power most of the incident light is
transmitted. But the photo current increases due to recombination of electrons
and holes.
•
When the incident optical power increases, the photo current(I) increases due
to tunneling of charge carriers. alidirli Thus the voltage drop IR across the
series resistor
•
Since the supply voltage remains constant, the negative bias across the diode
decreases. The heavy hole absorption peak is shifted to higher energies.
•
Therefore the transmission of light is decreased. This will result more amount
of light absorption and increased value of photo current due to tunneling.
•
Thus the increase of the input optical
power increases the output electric power as shown in fig.4.38.
•
At particular input optical power, the heavy hole and light hole absorption
peaks cross the photon energy of the input light. Hence there is no absorption
of light by exciton or heavy hole or light hole.
•
Thus the photo current decreases and correspondingly output electric power is
also decreased.lon
•
Thus the negative resistance region (NDR) arises as shown in fig. 4.36 and
4.37(b).
•
Further increase of input optical power increases the output electric power due
to ordinary photon absorption by the diode.
•
Thus the state of the device is altered by optical power. That is photonic or
optical switching is obtained by light beams with two different powers one for
complete transmission and other one for control (zero transmission of light).
•
The hysteresis observed in the curve (Fig. 4.37(b)) is due to the asymmetric
shapes of the heavy hole and light hole absorption curves. The feedback due to the
series resistor is optoelectronic type.
Electro-Optic
Switch based on NLO material
An
example of an electro-optic switch based on NLO materials is shown in fig.
4.38. The switch is comprised of two parallel waveguides made of NLO
materials.comanfy
The
waveguide channels have a different refractive index from the surrounding
material. The light can be switched back and forth between the channels by
applying and removing a voltage across the bottleneck. In the absence of an
electric field, the light travelling through the lower waveguide interacts with
the upper waveguide in a non-linear manner at the bottleneck, causing the light
to switch channels.
Switching
does not occur when an electric field is applied. The electric field polarizes
the NLO material and alters the refractive indices of the two channels, such
that the non-linear interaction at the bottleneck is modified and the light
stays in the lower waveguide.
Plasmon
OVA
plasmon is a quantum of plasma oscillation. Just as light (an optical
oscillation) consists of photons, the plasma oscillation consists of plasmons.
The
plasmon can be considered as a quasiparticle since it arises from the
quantization of plasma oscillations.
Thus,
plasmons are collective oscillations of the free electron gas density. For
example, at optical frequencies, plasmons can couple with a photon to create
another quasiparticle called a plasmon polariton.
Physics for Electrical Engineering: Unit IV: Optical Properties of Materials : Tag: : Types, Device Construction, Working Principle - Optical (photonic) switching
Physics for Electrical Engineering
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