Physics for Electrical Engineering: Unit III: Semiconductors and Transport Physics

Additional part B (16 Marks Questions)

Semiconductors and Transport Physics | Physics for Electrical Engineering

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Physics for Electrical Engineering: Unit III: Semiconductors and Transport Physics : Additional part B (16 Marks Questions)

Additional PART B (16 Marks Questions)

1. Derive an expression for electrical conductivity of intrinsic semiconductor.

2. Write down the expression for drift current and diffusion currents.

3. Explain working of any two Hall devices.

4. Describe construction and working of scholtty diode.

5. Write a note on ohmic contact.

Physics for Electrical Engineering: Unit III: Semiconductors and Transport Physics : Tag: : Semiconductors and Transport Physics | Physics for Electrical Engineering - Additional part B (16 Marks Questions)

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Related Topics


Semiconductors - Introduction, Definition, Classification, Characteristics, Uses

Direct and indirect band gap semiconductors - Types of Semiconductors

Intrinsic Semiconductors

Energy Band Diagram - intrinsic semiconductor

Carrier concentration in intrinsic semiconductors - Definition, Energy band diagram, derivation, equation

Intrinsic carrier concentration - Derivation, Equation, Limitations

Extrinsic or Impure Semiconductors - Definition, Advantages, Types

Carrier concentration in n - type smaloy semiconductors [Derivation]

Concentration of holes in valence band of p- type semiconductors [Derivation]

Variation of carrier concentration with temperature and impurity

Carrier Transport in Semiconductor mobility

Mobility - Expression for Electrical conductivity | Semiconductors

Drift and Diffusion - Definition, Formula, Explanation

Hall effect - Statement, Applications, Determination of Hall coefficient

Hall Devices - Definition, Three types

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Physics for Electrical Engineering

Physics for Electrical Engineering

PH3202 2nd Semester 2021 Regulation | 2nd Semester EEE Dept 2021 Regulation