The net current flows across a semiconductor has two components: (i) Drift current (ii) Diffusion current.
DRIFT AND DIFFUSION
The
net current flows across a semiconductor has two components:
(i)
Drift current
(ii)
Diffusion current.
Definition
The
electric current produced due to the motion of charge carriers under the
influence of an external electric field is known as drift current.
When
electrical voltage is applied to a material as shown in fig. 3.13, electric
field is produced at every point within the material.
The
charge carriers are forced to move in a particular direction due to the
electric field. This is known as the drift motion and the current is known
as drift current.
Drift
current density in a semiconductor due to electrons
Jn
(drift) = n µne E ...(1)
Drift
current density due to hole
Jp
(drift) = n µp e E ...(2)
where
n and p are number of electrons and holes per unit volume. μn and up
are the mobilities of electrons and holes respectively, e ts charge of
electrons and E is electric field.
So
total drift current density
J
= Jn (drift) + Jp (drift)
J
= ne μn E + pe μp E ...(3)
For
intrinsic semiconductor
J
= ni e (μn + μp ) E (n = p = ni)
Definition
The
non-uniform distribution of charge carriers creates the regions of uneven
concentrations in the semiconductor.
The
charge carriers move from the regions of higher concentration to the regions of
lower concentration. This process is known as diffusion. The current is known
as diffusion current.
Consider
a semiconductor having a concentration gradient of electrons dn / dx within
the semiconductor.
The
electrons diffuse from high concentration to low concentration due to the
concentration gradient as shown in Fig. 3.14.
Rate
of flow of electrons through unit area ∝
-
(dn / dx)
Here,
negative sign denotes that the electrons are diffusing from higher
concentration to lower concentration region.
Rate
of flow of electrons through unit area = Dn (dn / dx)
where
Dn is a proportionality constant and it is known as diffusion
coefficient of electrons.
Rate
of flow of electrons through unit area
=
- e × -Dn (dn / dx)
Rate
of flow electrons through unit area is the diffusion current density of
electrons Jn (diffusion)
Jn
(diffusion) = e Dn (dn / dx)
Similarly,
the diffusion current density of holes is given by
Jp
(diffusion) = -e Dp (dp / dx)
where
Dp is diffusion constant of holes.
Physics for Electrical Engineering: Unit III: Semiconductors and Transport Physics : Tag: : Definition, Formula, Explanation - Drift and Diffusion
Physics for Electrical Engineering
PH3202 2nd Semester 2021 Regulation | 2nd Semester EEE Dept 2021 Regulation