mobility μ is defined as the velocity of a charge carrier per unit electrical field strength.
MOBILITY
If
E = 1 V/m then μ = vd Thus, mobility μ is defined as the velocity
of a charge carrier per unit electrical field strength.
μn
and μp denote electron mobility and hole mobility
Since
the types of drift of electrons and of holes are different, the mobility of an
electron at any temperature is different from (greater than) that of the hole.
Table
3.6 gives the values of electron and hole mobilities at 300K.
Table
3.6
Electron
and hole mobilities at 300 K
If
the density of free electrons in the material is n, the net charge available
per unit volume of the material for the conduction is equal to ne, where e is
the charge of the electron.
When
an external electrical field E is applied, the electrons slod move with a drift
velocity vdn. Thus,
vdn
= µn E ... (2)
where
µn is the mobility of electron.
The
drift current density Jn due to electrons is defined as the charge
flowing across unit area of cross-section per unit time due to their drift
under the influence of an electrical field E. It is given by,
Jn
= nevdn ...(3)
If
σn is the conductivity of a semiconductor due to free electrons, the
current density Jn, is related to the applied electric field E by
Jn
= σn E ...(4)
or σn = Jn / E = nevdn
/ E ...(5)
Substituting
eqn (2) in eqn (5), we have
σn
= ne µn E / E
σn
= ne µn ...(6)
If
p is the number of holes per unit volume and conductivity due to the drift of
holes, then
σp
= pe µp ...(7)
where
µp is the mobility of holes in the material.
Thus,
total conductivity σ due to free electrons and holes
σ
= σn + σp
σ
= ne μn + pe μp
σ
= e (n μn + p (μp ) ...(8)
where
σ is the total conductivity of the material and it is generally expressed in
mho/m.
For
the intrinsic semiconductor which contains the same (8) number of free
electrons and holes, n = p = ni.
Therefore,
the electrical conductivity σi of an intrinsic semiconductor having
n, electron-hole pairs per unit volume is given by
From
eqn (8)
σi
= e ( ni µn + ni µp)
σi
= eni (µn + µp) ...(9)
slod
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Physics for Electrical Engineering: Unit III: Semiconductors and Transport Physics : Tag: : Expression for Electrical conductivity | Semiconductors - Mobility
Physics for Electrical Engineering
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